【作者】Jin, Z.，Qiao, L.，Liu, C.，Guo, C.，Liu, L.，Wang, J.
【作者单位】a School of Information Engineering, Chang'An University, Xi'an 710064, China; b School of Information Engineering, Tibet University for Nationalities, Xianyang 712082, China
【年份】2013
【卷号】Vol.34 No.7
【ISSN】1674-4926
【摘要】 Inter valley scattering has a great impact on carrier mobility of strained Si materials, so based on Fermi's golden rule and the theory of Boltzmann collision term approximation, inter valley phonon scattering mechanism of electrons in nano scale str...
