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2D BiSe van der waals epitaxy on mica for optoelectronics applications

  • 【作者】Wang, Shifeng,Li, Yong,Ng, Annie,Hu, Qing,Zhou, Qianyu,Li, Xin,Liu, Hao
  • 【作者单位】a Department of Physics, Innovation Laboratory of Materials for Energy and Environment Technologies, College of Science, Tibet University, Lhasa, 850000, China; b Institute of Oxygen Supply, Center of Tibetan Studies (Everest Research Institute), Tibet University, Lhasa, 850000, China; c Department of Electrical and Computer Engineering, Nazarbayev University, Nur-Sultan, 010000, Kazakhstan; d School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China; e Engineering Innovation Center of Southern University of Science and Technology, Beijing, 100083, China
  • 【年份】2020
  • 【卷号】Vol.10 No.9
  • 【页码】1-11
  • 【ISSN】2079-4991
  • 【关键词】BiSe Mica Optoelectronics Transparent conductive electrode Two-dimensional materials Van der Waals epitaxy 
  • 【摘要】 Bi 2 Se 3 possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs. It is also pointed out that ...
  • 【文献类型】 期刊
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